powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com dual igbtmod? nx-series module 300 amperes/1200 volts QID1230015 1 04/10 rev. 0 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: alsic baseplate low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell outline drawing and circuit diagram g2(38) e1c2(24) e1c2(23) tr 2 di2 di1 tr 1 e2(39) e2 (47) c1 (48) th th1 (1) th2 (2) g1(1 5) c1(22) e1(1 6) ntc det ail "b" a d e f j j ar z aa ab b ah aj ax aw al am ak ae ad as an aq af ag at au av ap g h p c x t t s s q r q n v u u w ac (4 pla ces) m kk l l y (4 pla ces) det ail "a" det ail "b" det ail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 *all pin dimensions wi thin a t olerance of 0.5 dimensions inches millimeters a 5.98 152.0 b 2.44 62.0 c 0.67 17.0 d 5.39 137.0 e 4.79 121.7 f 4.330.02 110.00.5 g 3.89 99.0 h 3.72 94.5 j 0.53 13.5 k 0.15 3.8 l 0.28 7.25 m 0.30 7.75 n 1.95 49.54 p 0.9 22.86 q 0.55 14.0 r 0.87 22.0 s 0.67 17.0 t 0.48 12.0 u 0.24 6.0 v 0.16 4.2 w 0.37 6.5 x 0.83 21.14 y m6 m6 dimensions inches millimeters z 1.53 39.0 aa 1.970.02 50.00.5 ab 2.26 57.5 ac 0.22 dia. 5.5 dia. ad 0.67+0.04/-0.02 17.0+1.0/-0.5 ae 0.51 13.0 af 0.27 7.0 ag 0.03 0.8 ah 0.81 20.5 aj 0.12 3.0 ak 0.14 3.5 al 0.21 5.4 am 0.49 12.5 an 0.15 3.81 ap 0.05 1.15 aq 0.025 0.65 ar 0.29 7.4 as 0.24 6.2 at 0.17 dia. 4.3 dia. au 0.10 dia. 2.5 dia. av 0.08 dia. 2.1 dia. aw 0.06 1.5 ax 0.49 12.5
QID1230015 dual igbtmod? nx-series module 300 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 04/10 rev. 0 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol QID1230015 units power device junction temperature t j -40 to 150 c storage temperature t stg -55 to 130 c mounting torque, m5 mounting screws 31 in-lb mounting torque, m6 main terminal screws 40 in-lb module weight (typical) 220 grams isolation voltage, ac 1 minute, 60hz sinusoidal v iso 2500 volts inverter sector collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 90c)* i c 300 amperes peak collector current** i cm 600 amperes emitter current (t c = 25c, t j < 150c)* i e *** 300 amperes peak emitter current (t j < 150c)** i em *** 600 amperes maximum collector dissipation (t c = 25c, t j < 150c)* p c 1580 watts *t c , t f measured point is just under the chips. **pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. ***represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 0 dimensions in mm (tolerance: 1mm) igbt fwdi ntc thermistor chip location (top view) 0 17.3 30.8 26.5 28.5 83.6 97.1 17.3 30.8 39.4 83.6 97.1 37.4 34.0 40.0 th chip location (top view)
QID1230015 dual igbtmod? nx-series module 300 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 04/10 rev. 0 electrical and mechanical characteristics, t j = 25c unless otherwise specifed inverter sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 30ma, v ce = 10v 6 7 8 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 300a, v ge = 15v, t j = 25c 2.0 2.6 volts i c = 300a, v ge = 15v, t j = 125c 2.2 volts i c = 300a, v ge = 15v, chip 1.9 volts input capacitance c ies 47.0 nf output capacitance c oes v ce = 10v, v ge = 0v 4.0 nf reverse transfer capacitance c res 0.9 nf total gate charge q g v cc = 600v, i c = 300a, v ge = 15v 1350 nc inductive turn-on delay time t d(on) 550 ns load turn-on rise time t r v cc = 600v, i c = 300a, 180 ns switch turn-off delay time t d(off) v ge = 15v, 600 ns time turn-off fall time t f r g = 1.0 , i e = 300a, 600 ns reverse recovery time* t rr inductive load switching operation 250 ns reverse recovery charge* qrr 8.0 c emitter-collector voltage* v ec i e = 300a, v ge = 0v 2.6 3.4 volts i e = 300a, v ge = 0v, chip 2.5 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units module lead resistance r lead main termnals-chip (per switch) 1.2 m thermal resistance, junction to case** r th(j-c) q per igbt 0.079 c/w thermal resistance, junction to case** r th(j-c) d per fwdi 0.144 c/w contact thermal resistance** r th(c-f) thermal grease applied 0.015 c/w internal gate resistance r gint t c = 25c 2.1 3.0 3.9 t c = 125c 4.2 6.0 7.8 external gate resistance r g 1.0 10 ntc thermistor sector , t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units zero power resistance r t c = 25c 4.85 5.00 5.15 k deviation of resistance ? r/r t c = 100c, r 100 = 493 C7.3 +7.8 % b constant b (25/50) b (25/50) = in(r 25 / r 50 ) / (1/t 25 C 1/t 50 )*** 3375 k power dissipation p 25 t c = 25c 10 mw *represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). **t c , t f measured point is just under the chips. ***r 25 : resistance at absolute temperature t 25 (k), r 50 : resistance at absolute temperature t 50 (k), t 25 = 25(c) +273.15 = 298.15(k), t 50 = 50(c) + 273.15 = 323.15(k)
QID1230015 dual igbtmod? nx-series module 300 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 04/10 rev. 0 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 0 1 3 2 4 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 600a i c = 300a i c = 120a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 t j = 25 c 600 200 100 400 300 500 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) 4 3 0 2 1 0 600 500 400 100 200 300 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 1.0? t j = 125c inductive load t f 10 3 gate resistance, r g , (?) 10 3 10 -1 10 0 10 2 10 1 switching time, (ns) switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 300a t j = 125c inductive load t f 10 1 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 500 1000 1500 2000 v cc = 600v v cc = 400v i c = 300a emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 1 10 2 10 0 10 3 v cc = 600v v ge = 15v r g = 1.0? t j = 25c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
QID1230015 dual igbtmod? nx-series module 300 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 04/10 rev. 0 time, (s) transient thermal impedance characteristics (inverter part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.066c/w (igbt) r th(j-c) = 0.12c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 3 10 0 10 1 10 2 10 0 10 1 v cc = 600v v ge = 15v i c = 300a t j = 125c inductive load 10 2 switching loss vs. gate resistance (inverter part - typical) e on e off gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 3 10 0 10 1 10 2 10 0 10 1 v cc = 600v v ge = 15v i e = 300a t j = 125c inductive load 10 2 reverse recovery switching loss vs. gate resistance (inverter part - typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 1.0? t j = 125c inductive load 10 3 reverse recovery switching loss vs. emitter current (inverter part - typical) e rr e rr v cc = 600v v ge = 15v r g = 1.0? t j = 125c inductive load e on e off collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 3 switching loss vs. collector current (inverter part - typical)
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